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Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree C
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Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree C
$162.28
Description
Melting point: 1339 degree C
coating speed
It can set up an alarm based on requirement
Attention: If a gas cylinder is used instead of air compressor(pic2)
Carbon Content:
Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000 Hydrothermal Reactors Melting point: 1339 degree CSingle crystal Si, Conductivity: Undoped Type: N Resistivity: > 1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (100) Polish: two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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