GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders } Package: Each wafer is

} Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

One pack of 48173 accessories

Since June 3

Growing Method:                 VGF

5 ×10-4 S/cm at 25 Room Temperature

GaN , N-type , Si doped (0001) 10x10.5x0.35mm,2sp Feeders } Package: Each wafer isGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of the Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Bow <5