GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 Please always keep the heating

Please always keep the heating or cooling rate less than 5oC/ minute

Customer can consider the following BST8-12

but no Ar gas

Doping: un-doped

The amorphous structure  ( no orientation)

GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 Please always keep the heatingGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 270+ 30 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Resistivity